Abstract
Structure and electrical properties of ZnO films deposited by a DC Arc Plasmatron were studied. Films were deposited at atmospheric pressure on a cold substrate. Effect of annealing and plasma treatment was investigated. It was shown that in the as-deposited state the films have an amorphous structure and resistance of about 2 MΩ/cm. Annealing in hydrogen atmosphere at 550 °C improves the crystalline structure and decreases the resistivity of the films down to 5 Ω/cm. Also treatment of surface by hydrogen–argon plasma can be used for decreasing of the resistance of the ZnO films.
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