Deposition of the IV–VI films by the hot-wall method on silicon substrates 100 mm in diameter

Abstract

An experimental installation for the deposition of films of IV–VI compounds by the hot-wall method on silicon substrates 100 mm in diameter is described. The PbTe films on silicon wafers with orientation (100) are obtained and investigated. The PbTe films have a continuous mirror surface and repeat the substrate orientation. The peculiarities of obtaining such films are discussed.