Abstract
High quality SiO2 layers were deposited on strained SiGe by direct photochemical vapor deposition with a deuterium lamp as the excitation source. It was found that the deposition rate increases linearly with the chamber pressure. The Auger electron spectroscopy profile shows that neither was Ge rejected nor was a Ge-rich layer formed after devices were fabricated. At room temperature, the leakage current is about 3×10-9 A/cm2 under a 2×106 V/cm electric field. The breakdown field can reach over 16 MV/cm for these SiGe metal-oxide-semiconductor (MOS) diodes.
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