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Abstract
Amorphous silicon nitride fims have been deposited at a high rate on the substrate without extreme rise of temperature by dc reactive sputtering in the atmosphere of a mixed gas of argon and nitrogen using a planar magnetron type of sputtering apparatus. The composition and deposition rate of the films were strongly depended on the partial pressure of nitrogen PN2. Deposition rate and the content of silicon in the films decreased with increasing PN2 especially in the range of PN2=3∼5 m Torr and became nearly constant in the range of PN2>5 m Torr. The refractive index, etch rate, resistivity, infrared absorption, transmittance and latent stress of obtained films were determined. The films deposited in the atmosphere of PN2>5 m Torr exhibited excellent properties even if they were deposited at very high deposition rate above 1000Å/min.
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