Deposition of silicon carbide films using a high vacuum metalorganic chemical vapor deposition method with a single source precursor: Study of their structural properties

Abstract

Silicon carbide (SiC) thin films were prepared on Si(100) substrates by high vacuum metalorganic chemical vapor deposition using a single-source precursor at various growth temperatures in the range of 700–1000 °C. The precursor is diethylmethylsilane, and is used without carrier gas. The effects of substrate temperature as well as deposition time on the crystal growth were investigated. The optimum temperature for the formation of high quality polycrystalline SiC thin films was found to be 900 °C on the basis of x-ray diffraction and transmission electron diffraction results. X-ray photoemission spectroscopy shows that SiC films grown at 900 °C have slightly carbon-rich compositions (Si:C=1:1.2) in the surface region, but stoichiometric composition in the bulk. Scanning and transmission electron microscope images show the influence of substrate temperature on the grain size and crystallinity of the films. Large grain sizes and high quality crystallinity can be obtained below 900 °C.