Deposition of SiC coatings by spraying a powder accelerated electrodynamically in a coaxial pulse plasma generator

Abstract

This paper presents the results of examinations of silicon carbide coatings formed on a silicon single crystal by deposition of a SiC powder accelerated electrodynamically under conditions of pulse plasma. The coatings thus obtained appeared to be solid silicon carbide layers with a hexagonal 2H structure. The microstructure and the thermal conductivity of the coatings were examined. The measured effective thermal conductivity of thin (10 μm) polycrystalline silicon carbide coatings deposited on silicon was about 51–75 W/m K, which is one order of magnitude lower than that of monocrystalline silicon carbide (270 W/m K).