Abstract
AbstractCu2ZnSnS4 (CZTS) films were produced in a one-stage depositing spray pyrolysis technique instead of that needed post-sulfurization treatment. X-ray diffraction (XRD) has been used to identify crystal structure of studied films before and after E.B. irradiation. The presence of (112) as a preferred orientation indicates the kesterite phase structure of CZTS films. The energy-dispersive X-ray average data at several points of the film surface assured the homogeneous distribution of the constituent elements in the CZTS film composition. The optical behavior and the optical band-gap values of the studied CZTS films before and after E.B. irradiation have been checked by using the Tauc relation. The optical band-gap values reduced from 1.98 to 1.86 eV when the irradiation doses rose from 0 to 60 kGy. The electrochemical performance of CZTS films, on the two different conductive substrates, was tested by the cyclic voltammetry and electrochemical impedance spectroscopy analysis. Graphical abstract
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