Abstract
An attempt was made to deposit in-plane aligned YSZ thin buffer layers on both sides of metallic tape by modifying the bias sputtering technique. Using these substrates, it has been demonstrated that YBa 2Cu 3O y films with critical current densities ( J c) of around 10 5 A/cm 2 (77 K, 0 T) can be successfully deposited on both sides of the tape simultaneously by a laser ablation technique. A high degree of in-plane grain alignment was observed in our YBa 2Cu 3O y films, which resulted in comparatively high J c values for the polycrystalline films. The proposed technique is pointed out as a potential method towards the fabrication of a tape conductor.
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