Abstract
Cubic boron nitride (c-BN) films were synthesized using magnetically enhanced active reaction evaporation system in which pulsed DC technique was employed to enhance the formation of c-BN film. The effect of pulsed DC bias, plasma discharge current, Ar/N2 flow ratio, substrate temperature on the formation of c-BN films was investigated. The friction of c-BN phase in the film increased with the increase of pulsed DC negative bias and discharge current.Almost single phase c-BN films were obtained when deposited at-155V of pulsed DC bias,15A of discharge current,500℃ of substrate temperature and 10 of Ar/N2 flow ratio.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
