Abstract
Semiconducting hematite Fe2O3 thin films were fabricated by means of reactive sputtering in a high power DC pulsed magnetron (HIPIMS) and in a DC pulsed hollow cathode plasma jet sputtering system. Fused silica slides (quartz) were used as substrates. Both plasma processes were monitored with the help of a quartz crystal monitor (QCM) that was also fitted with magnetic field electron suppression filter and biased collecting electrode. This set up measured the deposition rate and the ratio of ionized to neutral fluxes of depositing particles on the substrate during the coating process. The deposition methods were compared in terms of the properties of produced films such as crystalline structure, optical absorption and surface topography. The as-deposited hematite Fe2O3 thin films (without annealing) and after their thermal treatment (with annealing) were examined.
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