Deposition of Films from a Mixture of Hexamethylcyclotrisilazane Vapor and Argon in Inductively Coupled Plasma

Abstract

In an inductively coupled high-frequency discharge plasma, SiCxNy:H films are obtained from a mixture of hexamethylcyclotrisilazane vapor and argon at substrate temperatures of 100 to 400°C and a discharge power of 200 W. The simplest plasma components (nitrogen, cyan, silicon atoms, CH free radicals, and C2 dimers) are determined. Some physicochemical properties of the films, including the growth rate, types of chemical bonds, refractive index, transparency interval, and contact angle, are studied. The synthesized films have a polymer-like structure.