Abstract
The possibilities and the limitations of ion beam sputter deposition are discussed in connection with results obtained for the growth of epitaxial semiconductor films. It turns out that homo- and hetero-epitaxial films of good structural quality can be deposited at relatively low substrate temperatures and that effective doping offers no difficulties. On the other hand, some radiation damage caused by energetic particles must be taken into account. More recently, ion beam deposition methods could be realized under UHV conditions using about the same diagnostic equipment as in MBE. It can be expected that in preparing special film structures combinations between molecular and ion beam techniques might become attractive, while ion beam methods also will stand on its own in synthesizing unusual film phases.
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