Deposition of CeO 2 and NiO buffer layers for YBCO coated conductors on biaxially textured Ni substrates by a MOCVD technique

Abstract

CeO 2 and NiO buffers for YBCO coated conductors were deposited on biaxially textured Ni substrates by a metal-organic chemical vapor deposition method. The degree of texture and surface roughness of the oxide films were analyzed by X-ray pole figure, atomic force microscope (AFM) and scanning electron microscopy. The texture of deposited CeO 2 films was a function of deposition temperature and oxygen partial pressure ( P O 2 ). The (2 0 0) texture of CeO 2 was fully developed at T=500–520 °C and P O 2 =3.33 Torr. The growth rate of the CeO 2 films was 200 nm/min at T=520 °C and P O 2 =2.30 Torr, which is much faster than those prepared by other physical deposition methods. The (2 0 0) texture of NiO was formed at T=450 °C and P O 2 =1.67 Torr. The full width half maximum of the both films was in the range of 8–10°. The AFM surface roughness of the films was between 3.0–10 nm, depending on the deposition temperature.