Abstract
CdS thin films were prepared by the successive ionic layer adsorption and reaction (SILAR) method. The structural, optical, and electrical characterizations were carried out using X-ray diffraction, scanning electron microscopy, optical absorption, and electrical resistivity methods. The CdS films were annealed at various temperatures (373–673 K) in nitrogen atmosphere for 30 min and their structural, optical, and electrical properties are reported.
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