Abstract
Bias-assisted hot filament chemical vapour deposition (HFCVD) and ion-assisted pulsed laser deposition (IA-PLD) have been employed to deposit carbon nitride films. Crystalline C-N films composed of α- and βC3N4, as well as some unpredicted C-N solids have been synthesized on Ni(100) substrates via HFCVD using a gas mixture of nitrogen and methane. The crystal constants of the α- and β-C3N4 phases, obtained via X-ray diffraction, coincide well with those predicted theoretically; additionally, cone-shaped crystals are observed on the Si(100) substrates. Similarly, high density cone-shaped (Si)-C-N crystals have been obtained on Si(100) substrates via ion-assisted pulsed laser ablation of a carbon (graphite) target intersecting a nitrogen ion beam. Amorphous C-N films were also produced using this method.
Published Version
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