Abstract
Graphene layers and nanostructures were deposited on silicon dioxide (SiO2/Si) and silicon carbide (SiC) substrates at low gas pressure (1 – 5 torr) by microwave discharge PECVD (Plasma Enhanced Chemical Vapor Deposition). The advantage of this method is the relatively low temperature (600-700°C) of the substrate in the deposition process. The diffusion processes of hydrocarbon radicals on the surface of the substrates have a significant effect on the homogeneity of deposited structures. The deposited graphene nanotubes on SiC were analyzed by scanning electron microscope (SEM) and Raman spectroscopy is applied for characterization of the graphene layers. The deposited carbon layers on SiO2 were analyzed by atomic force microscope and their thickness (12-20 nm) were determined.
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