Abstract
A vertical liquid-delivery metal-organic chemical vapour deposition (MO-CVD) reactor was used to deposit Bi 4Ti 3O 12 films on SrTiO 3(1 0 0) substrates. Depending on the growth conditions the films show a pure Bi 4Ti 3O 12 phase or additionally a Bi poor phase. Well-ordered, (0 0 1)-oriented, epitaxially grown Bi 4Ti 3O 12 films were obtained at a growth temperature of 700 °C, a Bi excess of 25%, and a substrate rotation between 500 and 750 rpm. The Bi deficiency can be influenced by the concentration of MO precursor in the liquid solution. Depositions on NdGaO 3(1 1 0) also result in epitaxial (0 0 1)-oriented Bi 4Ti 3O 12 films, but the structural quality was slightly poorer.
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