Deposition of amorphous carbon nitride thin films using pressure-gradient RF magnetron sputtering and their chemical bonding structures

Abstract

Amorphous carbon nitride (a-CNx) thin films were deposited through radio frequency (RF) magnetron sputtering under increasing nitrogen gas pressure around a graphite target to provide nitrogen radicals at high concentrations. The basic properties of the films, mainly chemical bonding structures, were evaluated using X-ray photoelectron spectroscopy (XPS), soft X-ray emission spectroscopy (SXES), and near-edge X-ray absorption fine structure (NEXAFS), and compared with other films deposited through the common sputtering mode, i.e., at a uniform gas pressure in the chamber. To increase the gas pressure around the graphite target, the deposition rate was slightly increased, and the chemical bonding structure of the a-CNx films was changed. However, the nitrogen content in the a-CNx films obtained from XPS analysis did not increase when the nitrogen gas pressure around the graphite target was increased. The effect of nitrogen incorporation on the a-CNx films was comparatively more effective at higher RF powers. The intensity ratio of sp3-σ and sp2-σ in the SXES spectra of the films increased with increasing RF power, from 85 W to 130 W, then decreased with a further increase in the RF power. This trend was confirmed by the peaks in the C K-edge of the NEXAFS spectra.