Abstract
A reversible photo-induced deformation was found in amorphous carbon nitride (a-CNx) thin films prepared by reactive radio frequency magnetron sputtering method. The a-CNx films were deposited on a rectangular shaped ultrathin Si substrate at different temperatures in the range of room temperature (RT) to 600°C. A deflection of a-CNx/Si bilayer system was measured using optical cantilever technique with laser light. The bending signal indicates contraction of the film under illumination. The deflection increased with increasing the intrinsic stress of a-CNx films. An increase the ratio of deflection to the intrinsic stress corresponds to an expansion of optical band gap. As a result of Raman spectra, the photo-induced deformation was found to be inhibited with increasing sp2 cluster size.
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