Abstract
We present the preparation of zirconium hafnium nitride thin films as an alternative plasmonic sensing material. The ZrHfN thin films were deposited by closed-field dual-cathode DC unbalanced magnetron sputtering without an external substrate heating/biasing. A comprehensive investigation into the effect of zirconium sputtering current on the physical structural, and chemical compositions was systematically characterized by grazing-incidence X-ray diffraction, transmission electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, and X-ray absorption spectroscopy. Our results indicate that the optimal ZrHfN thin films deposited at 500 mA-IZr exhibit good crystallinity and high surface roughness, which presents excellent surface-enhanced fluorescent substrate performance for detecting rhodamine 6G at a limit of detection of 5.99 × 10−8 M, an enhancement factor of 15.62 ± 0.79-fold and displaying reusability through 25 cycles. These findings suggest promising prospects for developing ZrHfN-based SEF sensor chips for diverse applications in the future.
Published Version
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