Abstract
ABSTRACTThe remote plasma deposition process was studied by optical emission spectroscopy using Ne and N2 to detect He-metastables. a- Ge:H was prepared and its optoelectronic and structural properties were characterized. AM 1.5 photoconductivities around 10−6(Ωcm)−1 were obtained in intrinsic material with the Fermi level position lying near midgap. However, even in the best film the defect density is higher than 1017cm−3.
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