Abstract
We deposited silicon carbide (SiC) films formation using electron cyclotron resonance (ECR) plasma of methylsilane (SiH 3CH 3), and investigated the influence of a carrier gas (Ar or Xe). The SiC film deposition on Si (1 0 0) was carried out at a relatively low temperature of 750°C. By using ECR plasma with a carrier gas, Si–H bonds were not contained in the deposited films. Although surface morphology was very smooth in the case of using Ar carrier gas, crystallinity of the film was poor. This indicated that the film was eroded by carrier gas because surface morphologies were changed with different momentum values of ion.
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