Deposition and characterization of Pb TiO3 thin films on silicon wafers using metalorganic sources

Abstract

Ferroelectric PbTiO3 thin films were deposited on bare silicon and Pt/SiO2/Si substrates by metalorganic chemical vapor deposition in a temperature range from 270 to 550°C. The deposition of a single phase PbTiO3 thin film did not occur on bare silicon substrates. Instead a double layer of lead-silicate and PbTiO3 was formed owing to a serious diffusion of lead and oxygen ions into silicon substrates. But on Pt/SiO2/Si substrates, a single phase PbTiO3 oriented parallel to a-and c-axis was grown at a substrate temperature as low as 350°C even without a high temperature post-annealing. To get an optimal film, a precise control of input gas composition and also a deposition in a low temperature range from 350 to 400°C are necessary.