Deposition and characterization of ceria layers using the MOCVD method

Abstract

Cerium oxide layers on quartz glass substrates were synthesized by means of the MOCVD method using cerium acetyloacetonate or cerium tetramethylheptanedionate in the temperature range 300–900°C. Argon and air were used as carrier gases, while air also provided the oxidizing atmosphere for carbon removal. Temperature of gases was maintained close to evaporator temperature. Parameters of the synthesis process were fixed to assure the value of extended criterion Grx/Rex2<0.01. The microstructure of these layers for selected samples was examined by scanning electron microscopy. X-ray diffraction analysis was also performed. When the layer synthesis process is realized in air, then CeO2 layers were obtained. In the presence of Ar, CeO2−x layers were deposited and they contained carbon (in the form of clusters), which inhibits grain growth in these layers. The deposited layers were nanocrystalline.