Abstract
The use of a Mo–N barrier for solution-processed CIGS results in reduced MoSe2 formation. This enabled longer selenization time, enhanced grain growth and performance.
Highlights
Chalcopyrite Cu(In,Ga)Se2 (CIGS) solar cells are today a wellestablished and robust thin lm photovoltaic (PV) technology with laboratory-level efficiencies exceeding 22%.1 CIGS modules with stable power output are commercially available
The sheet resistance of the bilayer increased with increased sputtering pressure, while it remained relatively constant with varying nitrogen content of the Mo–N layer
The composition of the CIGS absorber through its depth is relatively constant, with overall [Cu]/[Ga + In] (CGI) and [Ga]/[Ga + In] (GGI) ratios of approximately 0.8 and 0.27 respectively
Summary
Various back contact diffusion barriers, including metal oxides and nitrides have been studied in order to prevent Se diffusion to the back contact of the CIGS/CZTS solar cell. Following the ideology of the IBM method, Brutchey et al effectively dissolved a series of V2VI3 chalcogenides, using a diamine–dithiol solvent mixture instead of hydrazine.[20] Our group employed this solvent mixture to readily dissolve Cu2S, In2S3 as well as Ga/Se precursors These solutions were used to fabricate CuIn(S,Se)[2] (CIS) and Cu(In,Ga)(S,Se)[2] (CIGS) thin lm solar cells in ambient air conditions with PCEs reaching 8% and 9.8% respectively.[21] Among other groups using the same solvent combination, Wu et al successfully dissolved pure metals (Cu, In, Ga) leading to a 9.5% efficient CIGS solar cell.[22] Agrawal et al used a similar solvent structure, monoamine–dithiol, resulting in a pure selenide 12.2% efficient CIGSe.[23] This was achieved in a controlled environment of a nitrogen- lled glovebox and using spin-coating which is a difficult technique to scale and not industrially relevant.
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