Abstract
To investigate the trap characteristic of native defects in a semi-insulating (SI) GaAs, the thermally stimulated depolarization current (TSDC) is compared with the thermally stimulated current (TSC). Beside several trap-limited current peaks, a significant TSDC peak with the activation energy of 0.40 eV is observed at 178 K. Dependence of the peak on the polarization voltage strongly suggests that this peak originates from the depolarization current from a dipolar defect in the SI GaAs.
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