Abstract
The electrical conduction properties of rf sputter-deposited (Ba, Sr)TiO3 (BST) films on Pt and IrO2 electrodes and metalorganic chemical vapor deposited (MOCVD) BST films on a Pt electrode were investigated and a new energy band model that satisfactorily explains the observed leakage current characteristics and film thickness dependent dielectric properties is proposed. The BST and Pt junction constituted a blocking contact with interface potential barrier heights of 1.6–1.7 eV and 1.2 eV for the sputtered and MOCVD films, respectively. Schottky emission behavior was observed at measurement temperatures higher than 120 °C and tunneling related conduction behavior appeared below that temperature for a film thickness of 40 nm. A partial depletion model with a very thin (about 1 nm) layer devoid of space charge at the interface with the Pt electrode is proposed to explain the V1/2 dependent variation of ln(Jo) as well as the decreasing dielectric constant with decreasing film thickness.
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