Abstract
A high-breakdown δ-doped In0.49Ga0.51P/InGaAs/AlGaAs high-electron-mobility transistor (HEMT) grown by low-pressure metalorganic chemical vapor deposition has been fabricated and demonstrated successfully. By using a wet etching gate process, we obtained depletion- and enhancement-mode HEMTs. The fabricated devices (1.5×125 μm2) show that the measured maximum drain saturation current density and extrinsic transconductance are 215 mA/mm and 82 mS/mm for depletion-mode and are 100 mA/mm and 75 mS/mm for enhancement-mode devices, respectively. The gate-to-drain breakdown voltage for both types is over 40 V. The high-breakdown voltage is attributed to the use of an In0.49Ga0.51P Schottky layer, δ-doping, and GaAs subspacer layer.
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