Abstract
We investigated the dependences of the deposition rate and residual OH content of SiO2 films on the concentration of trichloroethylene (TCE), which was added during deposition at low temperatures of 160–260 °C with the reactant gases of silicone oil (SO) and O3. The deposition rate depends on the TCE concentration and is minimum at a concentration of ∼0.4 mol/m3 at 200 °C. The result can be explained by surface and gas-phase reactions. Experimentally, we also revealed that the thickness profile is strongly affected by gas-phase reaction, in which the TCE vapor was blown directly onto the substrate surface, where it mixed with SO and O3. Furthermore, it was found that adding TCE vapor reduces residual OH content in the SiO2 film deposited at 200 °C because TCE enhances the dehydration reaction.
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