Dependence on crystallographic orientation of trapping properties in a polished MgO single crystal

Abstract

It is well known that the presence of space charges in an insulator is correlated with electric breakdown. Many studies have been carried out on the experimental characterization of space charges and on phenomenological models of trapping and detrapping. In this paper, we outline the dependence on crystallographic orientations of the charge-trapping phenomenon in polished MgO. The charging phenomenon was characterized during and after electron injection by using a scanning electron microscope (SEM). It was shown that the trapping ability depends on the dislocation network of different crystallographic orientations. PACS No.: 72.20Jv