Abstract
Temperature-dependent photoluminescence (PL) measurements have been carried out to investigate the dependence of the optical properties on the GaAs spacer thickness for vertically stacked InAs/GaAs quantum dots (QDs). The PL spectra showed that the peak corresponding to the interband transitions form the ground electronic subband to the ground heavy-hole band (E 0-HH 1) of the InAs QDs shifted to a higher energy side with increasing the GaAs spacer thickness and that the full width at maximum (FWHM) of the (E 0-HH 1) peak rapidly decreased with increasing a spacer thickness. The position energy and the FWHM of the (E 0-HH 1) peak for the InAs/GaAs QDs at several temperatures were observed. The present observations can help improve understanding of the dependence of the optical properties on the GaAs spacer thickness for vertically stacked InAs/GaAs QDs.
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