Abstract
Ge incorporation into molecular beam epitaxial GaAs as a function of substrate temperature (350–620 °C), Ge flux (109–1014 cm−2 sec−1) and of As4/Ga flux ratio (10/1) has been studied. The free-electron (7.4×1019 cm−3) and free-hole (3.0×1020 cm−3) concentrations in GaAs were the highest obtained to date. Tentative incorportion mechanisms for Ge in GaAs are also presented.
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