Abstract
The dependence of T c on uniaxial and hydrostatic pressure was investigated on a single crystal having nominal composition of Bi2Sr2CaCu2O x , which was grown by floating zone method. The electric resistance and the magnetic susceptibility were measured on the same specimen under hydrostatic and uniaxial pressure, respectively. And the Hall coefficient were measured on Bi2Sr2CaCu2O x under hydrostatic pressure. T c and the Hall coefficient was found to increase and decrease, respectively, with the increase of the hydrostatic pressure. The sign of dT c /dP ∥C and dT c /dP ⊥C under uniaxial pressure were found to be negative and positive, respectively. These results suggest that another process other than charge transfer between the CuO2 plane and the charge reservoir layer plays more important role in the Bi-system under pressure.
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