Abstract
AbstractThe lattice parameters of the hexagonal unit cell, the atomic parameters, and the shift of the Raman active vibrations are measured of p‐Bi2Te3 under uniaxial and hydrostatic pressure. The structural investigations are performed by neutron diffraction, and the lattice vibrations are studied by Raman scattering. The results of the diffraction experiments constitute a direct experimental confirmation of the weak bonding between the sandwiches in this narrow gap semiconductor with sandwich structure. As a consequence, some Raman active phonon modes show a rather strong dependence upon uniaxial pressure up to Δṽ/Δp = 1.9 × 10−8cm−1/Pa.
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