Abstract
We report the theoretical results of improved solar cell efficiency form InAs quantum dots (QDs) embedded in the intrinsic region of n-i-p GaAs structure. The effect of QD layers on the QD solar cell parameters is explained in detail. For QD layers of 250, we obtained a maximum efficiency of 27.4%. Increasing the number of layers beyond the optimum value resulted in the decrease of efficiency. The presence of InAs QD layers in the cell structure results in a significant rise of the short circuit current density from 33.4 mA/cm2 without InAs QD to 45.4 mA/cm2 in the presence of InAs QD. At the same time, the efficiency of the cell increased from 20.5% without InAs QD to 27.4% with InAs QD.
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