Abstract

W-doped VO2 films were prepared by DC reactive magnetron sputtering with various substrate bias. The microstructure, surface morphology, electrical and optical performances of the films were characterized by x-ray diffraction, scanning electron microscope, four-point probe method and spectrophotometer, respectively. The effect of substrate bias on microstructure, electrical and optical properties of sputtered W-doped VO2 films was studied. The XRD results reveal that all samples exhibit preferential VO2 (011) lattice orientation except the as-grown sample in our experiment. All the samples applied substrate bias show some degree optical switching performance in IR range, while the thermochromic phenomena was observed from resistance-temperature dependence plot only for the samples of substrate bias varied from-100V to-200V. This indicate that the optical and electrical properties of W-doped VO2 films have different sensitivity to substrate bias. Optimal substrate bias of-200V sample shows fine semiconductor-metal-transition performance.

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