Dependence of implantation-induced damage with photoluminescence intensity in GaN:Er

Abstract

Erbium was implanted with energies 200 or 400 keV into epitaxial (0 0 0 1) GaN grown on (0 0 0 1) Al 2O 3 substrate at room temperature (RT) and 400°C. Both random (10° tilt from c-axis) and channeled (along c-axis) implantations were studied. RBS/Channeling technique was used to study the dependences of the radiation damage with ion implantation energy, direction and temperature. It was found that the channeling implantation or elevating temperature implantation both resulted in the decrease of the damage. Moreover, the Photoluminscence (PL) properties of Er-implanted GaN thin films were also studied. The experimental results indicate that the PL intensity can be enhanced by raising implantation energy or implanting along channeling direction.