Abstract
Conversion efficiency of polycrystalline silicon pn solar cells, which are fabricated using wafers sliced out of B-doped p-type poly-Si ingots, strongly depends on where it is taken from within the ingot. Since the wafers near the bottom or top of the ingot cannot be used for commercial solar cells, the relationship between the conversion efficiency and the temperature dependence of the hole concentration in poly-Si wafers is investigated. It is found that the hole concentrations are classified into three categories. In wafers near the bottom of the ingot it is abnormal because it shows a peak, while the behavior in wafers near the top results from the incorporation of another acceptor species into the wafers or the creation of defects in the wafers besides B acceptors.
Paper version not known (
Free)
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call