Dependence of heavy hole exciton binding energy and the strain distribution in GaAs1−xBix/GaAs finite spherical quantum dots on Bi content in the material

Abstract

The ground state binding energy of heavy hole excitons confined in GaAs1−xBix/GaAs spherical quantum dots is calculated as a function of dot radius and the Bi content using a Variational method based on 1-s hydrogenic wave functions with effective mass approximation. The parameter shows strong dependence on the Bi mole fraction x, particularly at smaller values of the dot radii. The strain associated with the quantum dot is found to decrease exponentially with increase in dot radius and shows a linear increase with Bi composition.