Abstract
Abstract This paper presents a study on how body material properties affects the electrical characteristics of a Junctionless field effect transistor (JLFET). The study is performed by simulating a symmetric double gate JLFET on TCAD simulator for the materials- Silicon (Si), Germanium (Ge), Gallium Arsenide (GaAs) and Gallium Nitride (GaN). Simulations show that the use of compound materials (GaAs, GaN) in the body of JLFET results in better electrical characteristics compared to other element semiconductor (Si, Ge).
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