Abstract
The dependence of donor-acceptor pair (DAP) emission properties on impurity concentrations of N and B in 6H-SiC epilayers was investigated. Doped samples were grown by closed sublimation technique, and impurity concentrations were confirmed by secondary ion mass spectrometry (SIMS). Photoluminescence (PL) measurement results indicate that p-type 6H-SiC with NA>ND had extremely low DAP emission efficiency, whereas n-type 6H-SiC with NA<ND showed intense DAP emission. Moreover, n-type 6H-SiC with high N and B concentrations exceeding 1018cm-3 is preferable for high DAP emission efficiency.
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