Abstract
Ion-beam deposited multilayered Cr/CoNi/Cr films with specific profiles and preferred orientation (PO) hcp CoNi(110)/Cr(200), with a small amount of unoriented hcp CoNi phase, were examined by Secondary Ion Mass Spectrometry (SIMS) analysis. H c values of these films ranged between 730 and 2260 Oe depending on substrate temperature. It was determined that the increase in H c was caused by the reciprocal thermal diffusion of Cr and Co, both the width of diffusional area and grain size increasing, the absence of oxygen impurities and the presence of an approximately equal small quantity of carbon impurities in Co layer independent on temperature, the cleaning of Cr layers from carbon impurities due to their reaction with oxygen impurities. The above cleaning process occurs with microquantity of impurities and can be observed due to carbon and oxygen containing complex ions through delicate investigation by SIMS analysis.
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