Abstract
The dependence of the mobility of charge carriers on voltage has been studied in undoped GaSe single crystals and crystals doped with gadolinium; the latter crystals have exhibited various values of dark resistivity (ρd.r ≈ 104−108 Ω cm at 77 K) and of the doping level (N = 10−5, 10−4, 10−3, 10−2, and 10−1 at %). It is established that the dependence of the charge-carrier mobility on the electric field applied to the sample E ≤ 102 V/cm is observed in undoped high-resistivity GaSe crystals (ρd.r ≥ 104 Ω cm) and in lightly doped GaSe crystals (N ≤ 10−2 at %) in the region of T ≤ 150 K. It is found that this dependence is not related to heating of the charge carriers by an electric field; rather, it is caused by elimination of drift barriers as a result of injection.
Published Version
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