Abstract
Density and resistivity of sputtered tungsten films are directly measured as a function of angle-of-vapor incidence. The film density is found to drop off quickly at deposition angles greater than 50°, and the resistivity rises sharply at angles greater than 70°. These deposition angle effects in films deposited over topography can be predicted using simulation by ballistic deposition (SIMBAD), a two-dimensional computer simulation of thin-film growth using ballistic deposition of hard disks. Simulated film structure and density is in good agreement with real tungsten films deposited over vias. To confirm density predictions, etch rate measurements made on planar films are presented which confirm the dependence of etch rate on film density. The results of the measurement are used to develop an etching algorithm using SIMBAD density predictions. Films deposited over vias are etched to reveal the presence of low-density regions of film covering the via sidewalls, showing excellent agreement with the simulation results.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.