Abstract
The density of states in the gap of CdTe: V is studied by means of optical transmission, spectral photoresponse, dark conductivity, and modulated photocurrent measurements. Four peaks of localized gap states are identified, the two main ones consisting of donor states located at 1.1 eV below the conduction band and states located 0.75 eV above the valence band, respectively. The dark conductivity is shown to be dominated by holes, while the photoconductivity is shown to be dominated by electrons or holes, depending on temperature and light intensity.
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