Abstract
Space charge limited currents (SCLC) have been used to study the density of localised states (DOS) in partially compensated, doped hydrogenated amorphous silicon (a-Si:H). Boron-doped a-Si:H counterdoped with phosphorus shows a different DOS dependence on the lower dopant concentration, compared with phosphorus-doped a-Si:H counterdoped with boron. The difference has been attributed to differences in the hydrogen diffusion coefficient and in the concentration of phosphorus-boron complexes.
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