Abstract
Using Schottky diodes, the density of localized states (DOS) has been estimated in thin films of hydrogenated amorphous silicon (a-Si:H), by measuring steady state capacitance as a function of bias, C( V), frequency, C( ω) and temperature, C( T). The DOS at the Fermi-level is found to lie between 10 16−10 17 cm −3 eV −1 and is in agreement with the results obtained by space charge limited currents (SCLC) and isothermal transient capacitance (ICTS) measurements performed on the same diode. The assumptions used in deducing the DOS from each of the measurements have been spelled out and the limitations pointed out. This DOS has been compared with that obtained by other methods, e.g., deep level transient spectroscopy (DLTS), transient currents (TCUR) and the Field effect by others. It is suggested that the differences in DOS reported in the literature may be because different samples might not have identical DOS.
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