Abstract
Freestanding deposits are grown on a silicon cantilever from a precursor gas by an electron induced process. Deposit mass determination is performed with an atomic force microscopy setup, where the cantilever resonance frequency shift, resulting from mechanical removal of the deposit, is measured. Deposits from hexafluoroacetylacetonato–Cu(I)–vinyltrimethylsilane show densities ranging from 2.05±0.45 to 3.75±0.55g∕cm3. Deposits from tetramethoxysilane have a constant density of (1.9±0.3)g∕cm3. Densities of deposits from Co2(CO)8 and [RhCl(PF3)2]2 are linearly related to their composition. The ratio of impinging electrons per deposited atom, beam heating, and thermal stability of the precursor molecule determine the density and composition in focused-electron-beam-induced deposits.
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