Abstract
Dense and porous zinc oxide (ZnO) thin films were deposited onto silicon substrates in vacuum and in 100 mTorr O 2 at room temperature by pulsed laser deposition using 15 ns krypton fluoride (KrF), λ = 248 nm, laser pulses with laser fluence of 3 J cm −2. The structural, morphological, optical and photoluminescence properties of the as-grown and annealed ZnO thin films were studied. O 2 background gas during deposition and post-annealing treatment were essential to obtain a crystalline structure and strong ultraviolet (UV) luminescence emissions.
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