Abstract
Polycrystalline silicon films on alumina ceramic are recrystallized under normal freezing conditions. A multi-layered structure containing borosilicate glass and titanium layers is successfully used to prevent molten silicon films from agglomeration. The films obtained are dendritic and of mm size. Chemical etching reveals tilt boundaries, linear and dot-like defects in addition to grain boundaries. The thin film solar cells fabricated on the recrystallized silicon by successive deposition of p and n+ layers show photovoltaic conversion efficiencies of up to 2.6% at a fill factor of 0.67 under an AMI simulator. From the spectral response curves of the cells, the electron diffusion length of the p-type active layers is calculated to be 1 µm and causes a low short circuit current density of 9.8 mA/cm2.
Published Version
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